Muhammad Farhan T. in

Muhammad Farhan T.

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Innovation Engineer - R&D at Valeo Germany
📍 Nuremberg, Bavaria, Germany

Muhammad Farhan T. is an R&D Electronics Engineer at Valeo Germany, specializing in power semiconductors for e-automotive traction inverters. His expertise covers Silicon and Wide-Bandgap (SiC/GaN) semiconductors, simulations, and reliability testing. He holds a Master of Science from Technische Universität Ilmenau and has a background in industrial automation and IoT hardware.

He has co-authored and presented research on the reliability and thermal modeling of Gallium Nitride (GaN) power transistors at international IEEE conferences.

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Experience
10 Years
Current Role
Innovation Engineer - R&D
Job Level
Middle
Location
Nuremberg, Bavaria, Germany
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Priorities

Topics Muhammad cares about

Wide-Bandgap Semiconductors
His current role and research focus on SiC and GaN semiconductors for automotive electronics, including publications on GaN HEMT reliability presented at IEEE workshops.
EV Powertrain Technology
Develops and characterizes power electronics for traction inverter applications, aiming to ensure reliability and efficiency in the next generation of electric vehicles.
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Career

Work history

6-2023
Innovation Engineer - R&D
Valeo Germany
4-2021 - 5-2023
Scientific Research Engineer in Semiconductor Device Testing & Reliability
Huawei
7-2019 - 2-2021
Developer Research and Development
QUNDIS GmbH
2-2018 - 3-2019
Research Assistant
Technische Universität Ilmenau
11-2016 - 9-2017
Assistant Manager - System and Solutions
Mechatronix
In the press

Media appearances

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Education
2-2018 - 12-2020
Master of Science - MS
Technische Universität Ilmenau
1-2010 - 6-2014
Bachelor's degree
University of Engineering and Technology Pakistan
Social presence
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Behavioral profile

DISC profile (public)

DISC behavioral profile

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